smd type smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK2926S features low on-resistance r ds =0.042 typ. high speed switching absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v i d 15 a i dp *60 a power dissipation p d 25 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =10ma,v gs =0 60 v drain cut-off current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 16v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.5 v forward transfer admittance y fs v ds =10v,i d =8a 7 11 s v gs =10v,i d =8a 0.042 0.055 v gs =4v,i d =8a 0.065 0.11 input capacitance c iss 500 pf output capacitance c oss 260 pf reverse transfer capacitance c rss 110 pf turn-on delay time t on 10 ns rise time t r 80 ns turn-off delay time t off 100 ns fall time tf 110 ns v ds =10v,v gs =0,f=1mhz i d =8a,v gs(on) =10v,r l =3.75 drain to source on-state resistance r ds(on) 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type smd type product specification
|
